PESD12VS2UAT Datasheet | NXP Semiconductors

FEATURES - Unidirectional ESD protection of up to two lines - mon-cathode configuration - Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs - Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A - Ultra-low reverse leakage current: IRM < 700 n A - ESD protection > 30 k V - IEC 61000-4-2; level 4 (ESD) - IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. PINNING APPLICATIONS - puters and peripherals - munication systems - Audio and video equipment - Data lines - CAN bus protection. DESCRIPTION Unidirectional double ESD protection diodes in mon cathode configuration in the SOT23 plastic package. Designed to protect up to two transmission or data lines against damage from Electro Static Discharge (ESD) and other transients. MARKING TYPE NUMBER PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Note 1. - = p : made in Hong Kong. - = t : made in Malaysia. - = W : made in China. MARKING CODE(1) - 7A - 7B - 7C - 7D - 7E PESDx S2UAT series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines VALUE 3.3, 5, 12, 15 and 24 UNIT V 207, 152, 38, 32 p F and 23 2 PIN 1 2 3 anode 1 anode 2 DESCRIPTION mon cathode 1 3 2 001aaa401 sym002 Fig.1 Simplified outline (SOT23) and symbol. 2004 Feb 18 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp PARAMETER peak pulse power PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Ipp peak pulse current PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. junction temperature operating ambient temperature storage...