• Part: PESD5V0U5BF
  • Description: Ultra low capacitance bidirectional fivefold ESD protection arrays
  • Manufacturer: NXP Semiconductors
  • Size: 72.80 KB
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NXP Semiconductors
PESD5V0U5BF
PESD5V0U5BF is Ultra low capacitance bidirectional fivefold ESD protection arrays manufactured by NXP Semiconductors.
description Ultra low capacitance bidirectional fivefold Electro Static Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect up to five signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package SOT886 PESD5V0U5BV SOT666 JEDEC MO-252 - Package configuration leadless ultra small ultra small and flat lead 1.2 Features I Bidirectional ESD protection of up to I ESD protection up to 10 k V five lines I Ultra low diode capacitance: Cd = 2.9 p F I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 n A I AEC-Q101 qualified 1.3 Applications I puters and peripherals I Audio and video equipment I Cellular handsets and accessories I 10/100/1000 Mbit/s Ethernet I munication systems I Portable electronics I Subscriber Identity Module (SIM) card protection I Fire Wire I High-speed data lines NXP Semiconductors PESD5V0U5BF; PESD5V0U5BV Ultra low capacitance bidirectional fivefold ESD protection arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5V - 2.9 3.5 p F 2. Pinning information Table 3. Pinning Pin Description PESD5V0U5BF 1 cathode (diode 1) 2 mon cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) 6 cathode (diode 5) PESD5V0U5BV 1 cathode (diode 1) 2 mon cathode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) 6 cathode (diode 5) Simplified outline Graphic symbol 65 bottom view 16 25...