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PESD5V0X2UAM - Ultra low capacitance unidirectional double ESD protection diode

Features

  • 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z.

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Datasheet Details

Part number PESD5V0X2UAM
Manufacturer NXP
File Size 222.99 KB
Description Ultra low capacitance unidirectional double ESD protection diode
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Full PDF Text Transcription

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2SB1565 Transistors For Power Amplification (−60V, −3A) 2SB1565 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 10.0 4.5 φ3.2 2.8 14.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.
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