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PH2925U - N-channel TrenchMOS ultra low level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Low thermal resistance s Low threshold voltage s SO8 equivalent area footprint s Low on-state resistance. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH2925U N-channel TrenchMOS™ ultra low level FET M3D748 Rev. 02 — 08 April 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low thermal resistance s Low threshold voltage s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched-mode power supplies s Notebook computers. 1.4 Quick reference data s VDS ≤ 25 V s Ptot ≤ 62.5 W s ID ≤ 100 A s RDSon ≤ 2.9 mΩ 2.