PH4030AL Datasheet | NXP Semiconductors

N-channel Trench MOS logic level FET Rev. 05 - 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting and consumer applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Consumer applications - Desktop Voltage Regulator Module (VRM) - Notebook Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 69...