Click to expand full text
PH6030L
N-channel TrenchMOS logic level FET
Rev. 01 — 29 July 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features and benefits
Lead-free package Logic level compatibile
Optimized for use in DC-to-DC converters
Very low switching and conduction losses
1.3 Applications
DC-to-DC convertors Notebook computers
Switched-mode power supplies Voltage regulators
1.4 Quick reference data
Table 1. Quick reference
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3
Dynamic characteristics
QGD
gate-drain charge VGS = 4.
PH6030L Datasheet
