PH8230 - N-channel enhancement mode field-effect transistor

NXP Semiconductors

General Description

N-channel enhancement mode ﬁeld-effect power transistor in a SOT669 (LFPAK) package.

Product availability: PH8230 in SOT669 (LFPAK).

Key Features

s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3.

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PH8230 n-channel enhancement mode field-effect transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PH8230
Manufacturer	NXP Semiconductors
File Size	214.84 KB
Description	N-channel enhancement mode field-effect transistor
Datasheet	PH8230 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH8230 N-channel enhancement mode ﬁeld-effect transistor M3D748 Rev. 01 — 23 June 2003 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH8230 in SOT669 (LFPAK). 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched mode power supplies s Notebook computers. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 50 W s ID ≤ 30 A s RDSon ≤ 8.2 mΩ 2.