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PHB23NQ10LT
N-channel TrenchMOS logic level FET
Rev. 01 — 11 July 2006 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
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s Logic level threshold s Fast switching
s TrenchMOS technology
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies s General purpose switching
1.4 Quick reference data
s VDS ≤ 100 V s RDSon ≤ 72 mΩ s ID ≤ 23 A s QGD = 9.3 nC (typ)
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
mbb076
Simplified outline
[1]
Symbol
D
mb
G S
2 1 3
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
PHB23NQ10LT Datasheet
