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PHB23NQ10LT - N-channel TrenchMOS logic levelFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • www. DataSheet4U. com s Logic level threshold s Fast switching s TrenchMOS technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHB23NQ10LT N-channel TrenchMOS logic level FET Rev. 01 — 11 July 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features www.DataSheet4U.com s Logic level threshold s Fast switching s TrenchMOS technology 1.3 Applications s DC-to-DC converters s Switched-mode power supplies s General purpose switching 1.4 Quick reference data s VDS ≤ 100 V s RDSon ≤ 72 mΩ s ID ≤ 23 A s QGD = 9.3 nC (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain mbb076 Simplified outline [1] Symbol D mb G S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2.