PHB23NQ15T Datasheet PDF - NXP N-channel TrenchMOS transistor Specs

PHB23NQ15T - N-channel TrenchMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

’Trench’ technology.
Low on-state resistance.
Fast switching.
Low thermal resistance SYMBOL d QUICK.

Datasheet Details

Part number	PHB23NQ15T
Manufacturer	NXP
File Size	99.05 KB
Description	N-channel TrenchMOS transistor
Datasheet	PHB23NQ15T Datasheet
Additional preview pages of the PHB23NQ15T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP23NQ15T, PHB23NQ15T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 23 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.

Published: Mar 22, 2005 |