PHB27NQ10T Datasheet PDF - NXP N-channel TrenchMOS transistor Specs

PHB27NQ10T - N-channel TrenchMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

’Trench’ technology.
Low on-state resistance.
Fast switching.
Low thermal resistance SYMBOL VDSS = 100 V ID = 28 A g RDS(ON) ≤ 50 mΩ s.

Datasheet Details

Part number	PHB27NQ10T
Manufacturer	NXP
File Size	115.89 KB
Description	N-channel TrenchMOS transistor
Datasheet	PHB27NQ10T Datasheet
Additional preview pages of the PHB27NQ10T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 28 A g RDS(ON) ≤ 50 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB27NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package.

Published: Mar 22, 2005 |