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PHB33NQ20T - N-channel TrenchMOS standard level FET

General Description

Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Low on-state resistance s Low thermal resistance s Fast switching s Low gate charge. 1.3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Low thermal resistance s Fast switching s Low gate charge. 1.3 Applications s DC-to-DC primary side switching. 1.4 Quick reference data s VDS ≤ 200 V s RDSon ≤ 77 mΩ s ID ≤ 32.7 A s Qgd = 9.6 nC (typ). 2. Pinning information Table 1: 1 2 3 mb gate drain source mounting base; connected to drain [1] Discrete pinning Simplified outline mb mb Pin Description Symbol D G mbb076 S 2 1 1 2 3 3 SOT78 (TO-220AB) [1] It is not possible to make a connection to pin 2 of the SOT404 package.