PHB36N06E - PowerMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

The device is intended for use in automotive and general purpose switching applications.

NXP

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Datasheet Details

Part number	PHB36N06E
Manufacturer	NXP
File Size	55.07 KB
Description	PowerMOS transistor
Datasheet	PHB36N06E Datasheet
Additional preview pages of the PHB36N06E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.

Published: Mar 22, 2005 |