PHB80N06LT Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device Features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 75 178 175 14 UNIT V A W ˚C...