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PHC21025 - MOSFET

General Description

Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SO8 PHC21025 Complementary intermediate level FET Rev. 04 — 17 March 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ Motor and actuator drivers „ Power management „ Synchronized rectification 1.4 Quick reference data Table 1.