NXP Semiconductors PHC21025
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.| Part No. | PHC21025 |
|---|---|
| Datasheet | PHC21025 Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3APPLICATIONS
Motor and actuator drivers Power management Synchronized rectification 1.4 Quick reference data Table 1. Symbol VDS Quick reference data Parameter drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel Tsp ≤ 80 °C; P-channel Tsp ≤ 80 °C; N-channel Tamb = 25 °C Min - - [1] - VGS = -10 V; ID = -1 A; Tj = 25 °C; P-channel; see Figure 16; see Figure 19 VGS = 10 V; ID = 2.2 A; Tj = 25 °C; N-channel; see Figure 15; see Figure 18 - Typ Max Unit - 30 V - -30 V - -2.3 A - 3.5 A - 1W 0.22 0.25 Ω 0.08 0.1 Ω NXP Semiconductors PHC21025 Complementary intermediate level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD...
