NXP Semiconductors PHD16N03T
TrenchMOS standard level FET
| Part No. | PHD16N03T |
|---|---|
| Datasheet | PHD16N03T Download |
| Manufacturer |  NXP Semiconductors |
| Description | TrenchMOS standard level FET |
| Buy | Stock & Price |
DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 (D-PAK). 1.2FEATURES
s Fast Switching s TrenchMOSTM technology. 1.3APPLICATIONS
s DC-to-DC converters s General purpose switch. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 32.6 W s ID ≤ 13.1 A s RDSon ≤ 100 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbolDESCRIPTION
gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 Top view 3 MBK091 MBB076 Simplified outline [1] Symbol mb d g s SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors PHD16N03T TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source volt...
