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PHD20N06T - N-Channel Transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHD20N06T in SOT428 (D-PAK).

2.

Key Features

  • s TrenchMOS™ technology s Low on-state resistance s Fast switching. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHD20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 M3D300 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 (D-PAK). 2. Features s TrenchMOS™ technology s Low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters s General purpose switch. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) drain (d) 2 1 Top view 3 MBK091 MBB076 d g s SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics.