| Part number | PHD6N10E |
|---|---|
| Datasheet | PHD6N10E_PhilipsSemiconductors.pdf |
| File Size | 70.04 KB |
| Manufacturer | NXP Semiconductors |
| Description | PowerMOS transistor |
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N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low . Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON)...
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