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PHE13005 - Silicon Diffused Power Transistor

General Description

2.

Key Features

  • Fast switching.
  • High voltage capability of 700 V.
  • Low thermal resistance 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TO-220AB PHE13005 Silicon diffused power transistor 21 January 2014 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits • Fast switching • High voltage capability of 700 V • Low thermal resistance 3. Applications • Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current DC; Fig. 4; Fig. 1; Fig. 2 Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 1 A; VCE = 5 V; Tmb = 25 °C; Fig.