PHP10N40E Datasheet | NXP Semiconductors

FEATURES - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHP10N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 9.6 A RDS(ON) ≤ 0.75 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP10N60E is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 case gate drain source drain DESCRIPTION SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 9.6 6.1 38 167 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche energy CONDITIONS MIN. MAX. 731 18 9.6 UNIT m J m J A Unclamped inductive load, IAS = 9.4 A; tp = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V Repetitive avalanche energy1 IAR = 9.6 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V Repetitive and non-repetitive avalanche current 1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.000 Philips Semiconductors Product specification Power MOS transistors Avalanche energy rated THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient...