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PHP11N06LT - N-channel TrenchMOS transistor Logic level FET

General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Logic level compatible g PHP11N06LT, PHB11N06LT PHD11N06LT QUICK.

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Full PDF Text Transcription (Reference)

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHP11N06LT, PHB11N06LT PHD11N06LT QUICK REFERENCE DATA d SYMBOL VDSS = 55 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N06LT is supplied in the SOT428 (DPAK) surface mounting package.