| Part number | PHP12N10E |
|---|---|
| Datasheet | PHP12N10E_PhilipsSemiconductors.pdf |
| File Size | 72.09 KB |
| Manufacturer | NXP Semiconductors |
| Description | PowerMOS transistor |
|
|
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state...
See all NXP Semiconductors datasheets
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| PHP12NQ15T | N-channel TrenchMOS transistor |
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| PHP101NQ03LT | TrenchMOS logic level FET |
| PHP1025 | P-channel enhancement mode MOS transistor |
| PHP1035 | P-channel enhancement mode MOS transistor |
| PHP108NQ03LT | TrenchMOS logic level FET |
| PHP109 | P-channel enhancement mode MOS transistor |
| PHP10N10E | PowerMOS transistor |
