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PHP12NQ15T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s.

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Full PDF Text Transcription (Reference)

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.