PHP165NQ08T Datasheet | NXP Semiconductors

N-channel Trench MOS Silicon MAX standard level FET Rev. 02 - 27 March 2009 Product data sheet 1. Product profile .. 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. 1.2 Features and benefits - Fast switching - Low on-state resistance - Low recovered charge 1.3 Applications - AC-to-DC converters secondary side - Class D amplifiers - DC-to-DC converters - Motion control 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 250 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation recovered charge Symbol Parameter Source-drain diode Qr VGS = 0 V; IS = 5 A; d IS/dt = 150 A/µs; VDS = 12 V VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 10 56 n C Static characteristics RDSon drain-source on-state resistance 4.1 5 mΩ NXP Semiconductors N-channel Trench MOS Silicon MAX standard level FET 2. Pinning information Table 2. 1 2 3 mb Pinning information Description gate drain source drain mbb076 Pin Symbol .. G D S D Simplified outline mb Graphic symbol 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering...