PHP20NQ20T
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Higher operating power due to low thermal resistance
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
- DC-to-DC converters
- General purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS ID Ptot
Parameter
Conditions drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current
Tmb = 25 °C; VGS = 10 V total power dissipation
Tmb = 25 °C
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 10 A; Tj = 25 °C on-state resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 20 A; VDS = 160 V; Tj = 25 °C
Min Typ Max Unit
- - 200 V
- - 20 A
- -...
