Datasheet4U Logo Datasheet4U.com

PHP212L - Dual P-channel enhancement mode MOS transistor

General Description

Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.
  • Low threshold.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHP208 7/500 & 15/000 Watt TVS Module Semtech Corporation
PHP20N06T N-channel MOSFET nexperia
PHP222NQ04LT N-channel TrenchMOSTM logic level FET NXP Semiconductors
PHP225 Dual P-Channel 30V MOSFET VBsemi
PHP225NQ04T N-channel TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
PHP212 Dual P-channel enhancement mode MOS transistor
PHP21N06 TrenchMOSO transistor Standard level FET
PHP21N06 N-channel TrenchMOS transistor Logic level FET
PHP21N06LT N-channel TrenchMOS transistor Logic level FET
PHP21N06T TrenchMOSO transistor Standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PHP212L Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance • Low threshold. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.