Datasheet Summary
Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
Features
- ’Trench’ technology
- Very low on-state resistance
- Fast switching
- Stable off-state characteristics
- High thermal cycling performance
- Low thermal resistance
PHP24N03LT, PHB24N03LT
SYMBOL d
QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g s
RDS(ON) ≤ 56 mΩ (VGS = 5 V) RDS(ON) ≤ 50 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP24N03LT is...