Datasheet4U Logo Datasheet4U.com

PHP27NQ10T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 28 A g RDS(ON) ≤ 50 mΩ s.

📥 Download Datasheet

Other Datasheets by NXP Semiconductors

Part Number Description
PHP206 Dual P-channel enhancement mode MOS transistor
PHP20N06 N-channel TrenchMOS transistor
PHP20N06 PowerMOS transistor
PHP20N06E PowerMOS transistor
PHP20N06T N-channel TrenchMOS transistor
PHP20NQ20T N-channel TrenchMOS standard level FET
PHP212 Dual P-channel enhancement mode MOS transistor
PHP212L Dual P-channel enhancement mode MOS transistor
PHP21N06 TrenchMOSO transistor Standard level FET
PHP21N06 N-channel TrenchMOS transistor Logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 28 A g RDS(ON) ≤ 50 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB27NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package.