Datasheet Summary
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHP3055E, PHD3055E
Features
- ’Trench’ technology
- Low on-state resistance
- Fast switching
SYMBOL d
QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A g
RDS(ON) ≤ 150 mΩ (VGS = 10 V) s
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- d.c. to d.c. converters
- switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source DESCRIPTION
SOT78 (TO220AB) tab
SOT428...
