Datasheet Summary
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N-channel TrenchMOS™ standard level FET
M3D307
Rev. 01
- 31 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Fast switching s Low on-state resistance.
1.3 Applications s DC-to-DC converters s Switched-mode power supplies.
1.4 Quick reference data s VDS ≤ 105 V s Ptot ≤ 150 W s ID ≤ 47 A s RDSon ≤ 25 mΩ.
2. Pinning information
Table 1: Pinning
- SOT78 (TO-220AB), simplified outline and symbol Simplified outline mb
Pin Description 1 2 3 mb gate (g)
Symbol d drain (d) source (s) mounting base; connected to drain (d)
MBK106 g...