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PHP45NQ11T - N-channel TrenchMOS standard level FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Fast switching s Low on-state resistance. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PHP45NQ11T N-channel TrenchMOS™ standard level FET M3D307 Rev. 01 — 31 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Fast switching s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 105 V s Ptot ≤ 150 W s ID ≤ 47 A s RDSon ≤ 25 mΩ. 2. Pinning information Table 1: Pinning - SOT78 (TO-220AB), simplified outline and symbol Simplified outline mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base; connected to drain (d) MBK106 g s MBB076 1 2 3 SOT78 (TO-220AB) www.DataSheet4U.