Datasheet Summary
Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device Features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55...