Datasheet Summary
N-channel enhancement mode field-effect transistor
M3D087
Rev. 01
- 11 September 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223.
2. Features s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level patible.
3. Applications c c s Primary side switch in DC to DC convertors s High speed driver s Fast general purpose switch.
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning
- SOT223, simplified outline and symbol Description gate (g)
Simplified outline
Symbol drain (d) source (s) drain...