Datasheet4U Logo Datasheet4U.com

PHT4NQ10LT - N-channel enhancement mode field-effect transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHT4NQ10LT in SOT223.

2.

Key Features

  • s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHT400N16 THYRISTOR Nihon Inter Electronics
PHT400N8 THYRISTOR Nihon Inter Electronics
PHT Thin Film Wraparound Chip Resistors Vishay
PHT-10x-xx-L-x PRESS FIT .025 SQ POST HEADER Samtec
PHT-11x-xx-L-x PRESS FIT .025 SQ POST HEADER Samtec

Other Datasheets by NXP Semiconductors

Part Number Description
PHT4NQ10T N-channel enhancement mode field-effect transistor
PHT11N06LT TrenchMOS transistor Logic level FET
PHT11N06T TrenchMOS transistor Standard level FET
PHT1N52S PowerMOS transistor
PHT1N60R PowerMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PHT4NQ10LT N-channel enhancement mode field-effect transistor M3D087 Rev. 01 — 11 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223. 2. Features s s s s s TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. 3. Applications c c s Primary side switch in DC to DC convertors s High speed driver s Fast general purpose switch. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) 4 Simplified outline Symbol drain (d) source (s) drain (d) 1 Top view d g 2 3 MSB002 - 1 MBB076 s SOT223 1.