Datasheet4U Logo Datasheet4U.com

PHW35NQ20T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL d QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHW11N50E PowerMOS transistors Philips

Other Datasheets by NXP Semiconductors

Part Number Description
PHW11N50E PowerMOS transistors Avalanche energy rated
PHW11N50E PowerMOS transistors Avalanche energy rated
PHW13N40E PowerMOS transistors Avalanche energy rated
PHW14N50E PowerMOS transistors Avalanche energy rated
PHW20N50E PowerMOS transistors Avalanche energy rated

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHW35NQ20T FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 35 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHW35NQ20T is supplied in the SOT429 (TO247) conventional leaded package.