Datasheet4U Logo Datasheet4U.com

PHX15N06E - PowerMOS transistor Isolated version of PHP20N06E

General Description

N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHX18NQ11T N-channel TrenchMOS standard level FET NXP Semiconductors
PHX45NQ11T N-channel TrenchMOS standard level FET NXP Semiconductors
PHX4N50E N-channel 650V Power MOSFET VBsemi
PHX6N60E N-Channel 650V Power MOSFET VBsemi
PHX7NQ60E N-Channel MOSFET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
PHX10N40E PowerMOS transistors Avalanche energy rated
PHX14NQ20T N-channel TrenchMOS transistor
PHX18NQ20T N-channel enhancement mode field-effect transistor
PHX1N40 PowerMOS transistor
PHX1N40E PowerMOS transistor Isolated version of PHP2N40E

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. PHX15N06E QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 60 13 25 0.