PHX23NQ10T Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Features - ’Trench’ technology - Low on-state resistance - Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 13 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. Applications:- d.c. to d.c. converters - switched mode power supplies - T.V. and puter monitor power supplies The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package. PINNING PIN 1 2 3 case DESCRIPTION gate drain source isolated SOT186A (FPAK) case 1 2 3 LIMITING VALUES Limiting values in...