Datasheet4U Logo Datasheet4U.com

PHX23NQ10T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies

T.V.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching SYMBOL d QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHX18NQ11T N-channel TrenchMOS standard level FET NXP Semiconductors
PHX45NQ11T N-channel TrenchMOS standard level FET NXP Semiconductors
PHX4N50E N-channel 650V Power MOSFET VBsemi
PHX6N60E N-Channel 650V Power MOSFET VBsemi
PHX7NQ60E N-Channel MOSFET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
PHX23NQ11T N-Channel MOSFET
PHX20N06T N-channel standard level FET
PHX27NQ11T N-Channel MOSFET
PHX2N40E PowerMOS transistor Isolated version of PHP4N40E
PHX2N50E PowerMOS transistors Avalanche energy rated

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX23NQ10T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 13 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.