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PHX3055E - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab.

The device uses ’trench’ technology to achieve low on-state resistance.

d.c.

to d.c.

switched mode power supplies The PHX3055E is su

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Isolated mounting tab SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX3055E FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Isolated mounting tab SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 9 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab. The device uses ’trench’ technology to achieve low on-state resistance. Applications:• d.c. to d.c. converters • switched mode power supplies The PHX3055E is supplied in the SOT186A (isolated TO220AB) conventional leaded package.