NXP Semiconductors PHX45NQ11T
N-channel TrenchMOS standard level FET
| Part No. | PHX45NQ11T |
|---|---|
| Datasheet | PHX45NQ11T Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel TrenchMOS standard level FET |
| Buy | Stock & Price |
DESCRIPTION
N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. 1.2FEATURES
s Low on-state resistance s Isolated package. 1.3APPLICATIONS
s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 62.5 W s ID ≤ 30.4 A s RDSon ≤ 25 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbolDESCRIPTION
gate (g) drain (d) source (s) mounting base; isolated g mbb076 Simplified outline mb Symbol d s 1 2 3 MBK110 SOT186A (TO-220F) Philips Semiconductors PHX45NQ11T N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHX45NQ11T TO-220FDESCRIPTION
Version Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220 ‘full pack’ Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
