PHX8ND50E - PowerMOS transistors FREDFET/ Avalanche energy rated

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NXP

PHX8ND50E PowerMOS transistors FREDFET/ Avalanche energy rated by NXP - Datasheet Preview — Datasheet preview – PHX8ND50E

Datasheet Details

Part number	PHX8ND50E
Manufacturer	NXP
File Size	61.77 KB
Description	PowerMOS transistors FREDFET/ Avalanche energy rated
Datasheet	PHX8ND50E Datasheet
Additional preview pages of the PHX8ND50E datasheet.

Product details

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Isolated package.
Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK.

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Published: Mar 22, 2005 |