PIP3106-D Datasheet | NXP Semiconductors

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) IISL PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance Input supply current VIS = 5 V MAX. 50 8 40 150 100 650 UNIT V A W ˚C mΩ µA APPLICATIONS General purpose switch for driving lamps motors solenoids heaters FEATURES Trench MOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic patible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN .. O/V CLAMP INPUT POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT428 PIN 1 2 3 tab input drain source DESCRIPTION PIN CONFIGURATION tab SYMBOL D TOPFET I 2 drain 1 3 October 2001 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDS ID ID II IIRM PD Tstg Tj Tsold PARAMETER Continuous drain source voltage1 Continuous drain current Continuous drain current Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature2 Case temperature CONDITIONS VIS = 5 V; Tmb = 25 ˚C VIS = 5 V; Tmb ≤ 110 ˚C tp ≤ 1 ms Tmb ≤ 25 ˚C normal operation during soldering MIN. -5 -10 -55 MAX. 50 self limited 8 5 10 40 175 150 260 UNIT V A A m A m A W ˚C ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R =...