PIP3211-R Datasheet | NXP Semiconductors

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. QUICK REFERENCE DATA SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A ˚C mΩ APPLICATIONS General controller for driving lamps, motors, solenoids, heaters. VBG IL Tj RON FEATURES Vertical power Trench MOS Low on-state resistance CMOS logic patible Very low quiescent current Latched overtemperature protection Load current limiting Latched short circuit load protection Overvoltage and undervoltage shutdown with hysteresis Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT .. Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery PIN CONFIGURATION mb SYMBOL 3 1 2 4 5 TOPFET HSS Fig. 2. Fig. 3. September 2001 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj Tsold PARAMETER Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Mounting base temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy δ ≤ 0.1, tp = 300 µs IL = 10 A, VBG = 16 V Tj ≤ 150˚C prior to...