PLB16004U Overview
Description
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange. Fig.1 Simplified outline and symbol.
Key Features
- Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR
- Interdigitated common-base structure provides high emitter efficiency
- Gold metallization with barrier realizes very stable characteristics and excellent lifetime
- SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b e 2 Top view MAM112
