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PLB16004U - Microwave power transistor

General Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange.

Fig.1 Simplified outline and symbol.

Key Features

  • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR.
  • Interdigitated common-base structure provides high emitter efficiency.
  • Gold metallization with barrier realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching networks allow an easier design of circuits.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16004U Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR • Interdigitated common-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Intended for use in common-base class C power amplifiers at 1.6 GHz.