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PLB16012U Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET .. PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power.

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

2 Top view PLB16012U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C narrowband amplifier.

MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) 10 Gp (dB) >8 ηC (%) >45 Zi;

Key Features

  • Input matching cell allows an easier design of circuits.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

More Datasheets from NXP Semiconductors

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PLB16012U Distributor