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PMBFJ174 - P-channel MOSFET

General Description

Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc.

using SMD technology.

A special feature is the interchangeability of the drain and source connections.

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PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Rev. 3.0 — 24 January 2020 Product data sheet 1 Product profile 1.1 General description Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 1.2 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS VGSo -IG Ptot drain-source voltage gate-source voltage gate current total power dissipation up to Tamb = 25 ° C -IDSS drain current -VDS = 15 V; VGS = 0 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 RDS on drain-source ONresistance -VDS = 0.