Datasheet Summary
Dual N-channel field-effect transistor
Rev. 01
- 11 May 2004 Product data sheet
1. Product profile
1.1 General description
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.
CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.
MSC895
1.2 Features s s s s Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain.
1.3 Applications s AM input stage in car radios s VHF amplifiers s Oscillators and mixers.
1.4 Quick reference data
Table 1: Per FET VDS VGSoff IDSS Ptot yfs drain-source voltage gate-source cut-off voltage...