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PMC85XP - 30V P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Trench MOSFET technology.
  • NPN transistor built-in bias resistors.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DFN2020-6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Trench MOSFET technology • NPN transistor built-in bias resistors • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction 3. Applications • Charging switch for portable devices • High-side load switch • USB port overvoltage protection • Power management in battery-driven portables • Hard disk and computing power management 4.