NXP Semiconductors PMCPB5530X
MOSFET
| Part No. | PMCPB5530X |
|---|---|
| Datasheet | PMCPB5530X Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Very fast switching● Trench MOSFET technology
● Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
● Exposed drain pad for excellent thermal conduction 1.3
APPLICATIONS
● Charging switch for portable devices● DC-to-DC converters
● Small brushless DC motor drive
● Power management in battery-driven portables
● Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Conditions VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min - Typ 26 Max 34 Unit mΩ TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C 55 70 mΩ TR1 (N-channel) VDS VGS ID Tj = 25 °C -12 20 12 5.3 V V A NXP Semiconductors PMCPB5530X 20 V, complementary Trench MOSFET Table 1. Symbol VDS VGS ID [1] Quick ref...
