PMD5003K Datasheet | NXP Semiconductors

description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I I Low VCEsat (BISS) transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter junction Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces ponent count 1.3 Applications I Power MOSFET driver 1.4 Quick reference data Table 1. Symbol VCEO IC ICM Diode IF VF [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms Conditions open base Min Typ Max - 40 - 1 - 2 Unit V A A PNP transistor forward current forward voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IF = 200 m A [1] - 0.2 1.1 - .. NXP Semiconductors MOSFET driver 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base TR1, anode D1 emitter TR1, cathode D1 collector TR1 1 2 D1 Simplified outline Symbol TR1 006aaa656 3. Ordering...