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PMDXB600UNE Datasheet dual N-channel Trench MOSFET

Manufacturer: NXP Semiconductors

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Overview

DF N1 0 PMDXB600UNE 16 September 2013 10B -6 20 V, dual N-channel Trench MOSFET Product data sheet 1.

Key Features

  • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3.