PMEG45T15EPD Datasheet | NXP Semiconductors

description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits - Average forward current: IF(AV) ≤ 15 A - Reverse voltage: VR ≤ 45 V - Low forward voltage - Low leakage current due to Trench MEGA Schottky technology - High power capability due to clip-bonding technology and heat sink - Small and thin SMD power plastic package, typical height 0.78 mm 3. Applications - High efficiency DC-to-DC conversion - Switch mode power supply - Freewheeling application - Reverse polarity protection - Low power consumption application 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 k Hz; Tsp ≤ 120 °C; square wave Tj = 25 °C IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed VR = 10 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed VR = 45 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C; pulsed Min Typ Max Unit - - 15 A - - 45 V - 480 580 m V - 16 50 µA - 30 100 µA Scan or click this QR code to view the latest information for this product NXP Semiconductors 45 V, 15 A low VF Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 A anode 3 K cathode Simplified outline 1...