• Part: PMEG6010AED
  • Description: Low VF (MEGA) Schottky barrier diode
  • Manufacturer: NXP Semiconductors
  • Size: 55.17 KB
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Datasheet Summary

DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product specification 2003 Jun 27 Philips Semiconductors Product specification Low VF (MEGA) Schottky barrier diode Features - Low switching losses - Very high surge current absorption capability - Fast recovery time - Guard ring protected - Plastic SMD package. APPLICATIONS - Low power switched-mode power supplies - Rectification - Polarity protection. handbook, halfpage 6 PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package. 1 2...