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PMEG6010AED - Low VF (MEGA) Schottky barrier diode

General Description

GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package.

Marking code: M4.

Simplified outline SOT457 (SC-74) and symbol.

Key Features

  • Low switching losses.
  • Very high surge current absorption capability.
  • Fast recovery time.
  • Guard ring protected.
  • Plastic SMD package.

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DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product specification 2003 Jun 27 Philips Semiconductors Product specification Low VF (MEGA) Schottky barrier diode FEATURES • Low switching losses • Very high surge current absorption capability • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. handbook, halfpage 6 PMEG6010AED PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package. 1 2 3 MHC634 1, 2 5, 6 3, 4 Marking code: M4. Fig.1 Simplified outline SOT457 (SC-74) and symbol.