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PMEG6010CPAS Datasheet 1a Low Vf Dual Mega Schottky Barrier Rectifier

Manufacturer: NXP Semiconductors

Overview: DFN2020D-3 PMEG6010CPAS 60 V, 1 A low VF dual MEGA Schottky barrier rectifier 20 January 2015 Product data sheet 1.

General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2.

Key Features

  • Average forward current IF(AV) ≤ 1 A.
  • Reverse voltage VR ≤ 60 V.
  • Low forward voltage VF ≤ 540 mV.
  • Low reverse current.
  • Reduced Printed-Circuit-Board (PCB) area requirements.
  • Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity.
  • Leadless small SMD plastic package with visible and solderable side pads.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified 3.

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